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Effects of Ultraviolet Radiation on the Characteristics of Hydrogenated Amorphous Silicon Thin Film Transistors

Published online by Cambridge University Press:  21 February 2011

Seong K. Lee ,
Jin S. Park ,
Yong S. Kim ,
Jung R. Hwang ,
Chang H. Oh  and
Min K. Han
Seong K. Lee
Affiliation:
Department of Electrical Engineering, Seoul National University, Shinrim-Dong, Kwanak-Ku, Seoul 151–742, Korea
Jin S. Park
Affiliation:
Department of Electrical Engineering, Seoul National University, Shinrim-Dong, Kwanak-Ku, Seoul 151–742, Korea
Yong S. Kim
Affiliation:
Department of Electrical Engineering, Seoul National University, Shinrim-Dong, Kwanak-Ku, Seoul 151–742, Korea
Jung R. Hwang
Affiliation:
Department of Electrical Engineering, Seoul National University, Shinrim-Dong, Kwanak-Ku, Seoul 151–742, Korea
Chang H. Oh
Affiliation:
Department of Electrical Engineering, Seoul National University, Shinrim-Dong, Kwanak-Ku, Seoul 151–742, Korea
Min K. Han
Affiliation:
Department of Electrical Engineering, Seoul National University, Shinrim-Dong, Kwanak-Ku, Seoul 151–742, Korea
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Abstract

The experimental results regarding to the effects of ultraviolet (UV) light illumination on the characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFT's) have been presented. The device parameters of a-Si:H TFT, such as threshold voltage, field-effect mobility, and subthreshold slope, have been degraded by electrical stress and visible light illumination, but substantially improved by UV radiation. This may be attributed to an annealing effect on the dangling-bond defects, involving a number of phonons generated by absorption of high energy UV photons in the a-Si:H TFT channel. It has been also observed that the off-current of a-Si:H TFT decreases remarkably while the on-current changes very little. From the experimental results, we report that the improved on/off current ratio of a-Si:H TFT may be achieved by UV radiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 967
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Oki, K., Nasu, Y., Inoue, J., Hoshiya, T., Takahara, K., and Toyama, Y., Proc. SID 29 217 (1988).Google Scholar
[2] Powell, M.J., Appl. Phvs. Lett., 43 597 (1983).Google Scholar
[3] Hapburn, A.R., Marshall, J.M., Main, C., Powell, M.J., and van Berkei, C., Phys. Rev. Lett., 56 2215 (1986).Google Scholar
[4] Park, J.S., Oh, C.H., Choi, H.S., Han, M.K., Choi, Y.I., and Han, C.H., MRS 91 Spring Meeting. Google Scholar
[5] Powell, M.J., van Berkei, C., and Hughes, J.R., Appl. Phys. Lett., 54 1323 (1989).Google Scholar
[6] Jackson, W.B. and Moyer, M.D., Phvs. Rev. B 36 6217 (1987).Google Scholar
[7] Ganguly, G., Dutta, J., Ray, S., and Barua, A.K., Appl. Phys. Lett., 55 1975 (1989).Google Scholar
[8] Dutta, J. and Ganguly, G., Appl. Phvs. Lett., 57 1227 (1990).CrossRefGoogle Scholar
[9] Powell, M.J., IEEE Trans, on Electron. Dev., 36 2735 (1987).Google Scholar
[10] Glarum, S.H., J. Chem. Phvs., 33 1371 (1960).Google Scholar
[11] Jackson, W.B., Marshall, J.M., and Moyer, M.D., Phvs. Rev. B 39 1164 (1989).Google Scholar
[12] Shur, M., Hyun, C., and Hack, M., J. Appl. Phvs., 59 2488 (1986).Google Scholar