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Effects on TiN Film Properties of the Interaction Between Titanium and Borophosphosilicate Glass During High-Temperature Nitridation

Published online by Cambridge University Press:  25 February 2011

C. S. Galovich ,
S. S. Lee  and
D. L. Kwong
C. S. Galovich
Affiliation:
Physics Department, University of Northern Colorado, Greeley, CO 80639
S. S. Lee
Affiliation:
NCR Corporation, 1635 Aeroplaza Dr., Colorado Springs, CO 80916
D. L. Kwong
Affiliation:
Department of Computer and Electrical Engineering, U. of Texas at Austin, Austin. TX 78712
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Abstract

Titanium nitride, formed either by rapid thermal processing (RTP) or reactive sputtering, is commonly applied as a barrier film in the fabrication of metal-to-substrate contacts for CMOS devices. In one approach a titanium film is sputtered onto a patterned dielectric and then nitrided at a temperature greater than 500° C to form a TiN layer. Variations in the structure and resistivity of the titanium layer are observed when the titanium overlies a borophosphosilicate glass (BPSG) film. The structural change appears as a “wrinkling” of the TiN film and the TiN/BPSG interface. More severely wrinkled films are characterized by lower sheet resistivities. Results of TEM and SEM analyses are presented, as well as data on TiN resistivity and reflectance for nitridation temperatures in the range 650°C to 900°C, and for BPSG boron and phosphorus concentrations of approximately 3 to 5 wt. %. Mechanisms for the TiN wrinkling are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 679
Copyright
Copyright © Materials Research Society 1991

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References

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