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Efficient Visible Room Temperature Photoluminescence in Wide Gap Hydrogenated Amorphous Silicon-Carbon Alloys

Published online by Cambridge University Press:  16 February 2011

Leandro R. Tessler  and
Ionel Solomon
Leandro R. Tessler
Affiliation:
Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique, 91128 Palaiseau, Cedex, France
Ionel Solomon
Affiliation:
Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique, 91128 Palaiseau, Cedex, France
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Abstract

We report a photoluminescence study on amorphous hydrogenated silicon carbon (a-Si1-xCx:H) alloys with carbon concentration in the range O < x < 0.5, prepared by PECVD in the “low-power” regime, that preserves the tetrahedral coordination of the carbon atoms. These samples have optical gaps higher than conventional “high power” alloys with the same carbon content. For carbon concentrations below x = 0.2 the photoluminescence behaves essentially as in pure a-Si:H with increased gap, Urbach energy and DOS. For higher carbon concentrations there is a change in the recombination process, that we attribute to a change in the dominating diffusion process of the photogenerated carriers. The integrated photoluminescence intensity for carbon-rich samples is very weakly dependent on the temperature, and at room temperature it approaches that of pure a-Si:H at 77K. For all samples, the photoluminescence bandwidth can be well described by a zero-phonon model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 613
Copyright
Copyright © Materials Research Society 1994

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References

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