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Elaboration of h-Bn Sheathed β-Sic Nanocables

Published online by Cambridge University Press:  15 February 2011

K. Saulig-Wenger ,
D. Cornu ,
F. Chassagneux ,
P. Miele  and
T. Epicier
K. Saulig-Wenger
Affiliation:
Laboratoire Multimatériaux et Interfaces, UMR CNRS 5615 Université Claude Bernard- Lyon 1 43, Bd du 11 Novembre 1918 F-69622 Villeurbanne Cedex, France
D. Cornu
Affiliation:
Laboratoire Multimatériaux et Interfaces, UMR CNRS 5615 Université Claude Bernard- Lyon 1 43, Bd du 11 Novembre 1918 F-69622 Villeurbanne Cedex, France
F. Chassagneux
Affiliation:
Laboratoire Multimatériaux et Interfaces, UMR CNRS 5615 Université Claude Bernard- Lyon 1 43, Bd du 11 Novembre 1918 F-69622 Villeurbanne Cedex, France
P. Miele
Affiliation:
Laboratoire Multimatériaux et Interfaces, UMR CNRS 5615 Université Claude Bernard- Lyon 1 43, Bd du 11 Novembre 1918 F-69622 Villeurbanne Cedex, France
T. Epicier
Affiliation:
GEMPPM UMR CNRS 5510 INSA Lyon 20, Avenue Albert Einstein F-69621 Villeurbanne Cedex, France
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Abstract

h-BN sheathed β-SiC nanocables were synthesized under argon at 1200°C by the direct thermal treatment of a silicon powder mixed with turbostratic boron nitride. The structure and the chemical composition of these nanocables have been investigated by HRTEM, EDX and EELS. They have a diameter ranging from 10 to 80 nm. The core of these nanocomposites is composed of pure cubic silicon carbide and the outer layers have been shown to be hexagonal boron nitride planes, set in a parallel direction to the nanocables axis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 772: Symposium M – Nanotube-Based Devices , 2003 , M3.3
Copyright
Copyright © Materials Research Society 2003

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References

1. Iijima, S., Nature 354, 56 (1991)Google Scholar
2. Goldberg, D., Bando, Y., Kurashima, K., Sato, T., Diamond Relat. Mater. 10, 63 (2001)Google Scholar
3. Han, W., Bando, Y., Kurashima, K., Sato, T., Appl. Phys. Lett. 73 (21), 3085 (1998).Google Scholar
4. Chopra, N. G., Luyken, R. J., Cherrey, K., Crespi, V. H., Cohen, M. L., Louie, S. G., Zettl, A., Science 269, 966 (1995)Google Scholar
5. Tenne, R., Margulis, L., Genut, M., Hodes, G., Nature 360, 444 (1992)Google Scholar
6. Han, W., Fan, S., Li, Q., Hu, Y., Science 277, 1287 (1997)Google Scholar
7. Dai, H., Wong, E. W., Lu, Y. Z., Fan, S., Lieber, C. M., Nature 375, 769 (1995)Google Scholar
8. Han, W., Fan, S., Li, Q., Gu, B., Zhang, X., Yu, D., Appl. Phys. Lett. 71 (16), 2271 (1997).Google Scholar
9. Saulig-Wenger, K., Cornu, D., Chassagneux, F., Ferro, G., Epicier, T., Miele, P., Solid State Comm. 124, 157 (2002)Google Scholar
10. Davis, R. F., Palmour, J. W., Edmond, J. A., Diamond Relat. Mater. 1, 109 (1992)Google Scholar
11. Wong, K. W., Zhou, X. T., Au, F. C. K., Lai, H. L., Lee, C. S., Lee, S. T., Appl. Phys. Lett. 75 (19), 2918 (1999).Google Scholar
12. Lee, S.T. and al., US patent N° 6,221,154 B1 (2001).Google Scholar
13. Han, W., Fan, S., Li, Q., Liang, W., Gu, B., Yu, D., Chem. Phys. Lett. 265, 374 (1997)Google Scholar
14. Zhou, X. T., Zhang, R. Q., Peng, H. Y., Shang, N. G., Wang, N., Bello, I., Lee, C. S., Lee, S. T., Chem. Phys. Lett. 332, 215 (2000)Google Scholar
15. Paine, R. T., Narula, C. K., Chem. Rev. 90, 73 (1990)Google Scholar
16. Han, W., Redlich, P., Ernst, F., Rühle, M., Appl. Phys. Lett. 75 (13), 1875 (1999).Google Scholar
17. Tang, C.C., Bando, Y., Sato, T., Kurashima, K., Ding, X.X., Gan, Z.W., Qi, S.R., Appl. Phys. Lett. 80 (24), 4641 (2002).Google Scholar
18. Narula, C. K., Schaeffer, R., Paine, R. T., J. Am. Chem. Soc. 109, 5556 (1987)Google Scholar
19. Goldberg, D., Bando, Y., Eremets, M., Takemura, K., Kurashima, K., Yusa, H., Appl. Phys. Lett. 69 (14), 2045 (1996).Google Scholar
20. Popov, C., Plass, M. F., Kassing, R., Kulisch, W., Thin Solid Films 355-356, 406 (1999)Google Scholar
21. Sacks, M. D., US patent N° 6,203,904 (2001).Google Scholar
22. Crysanthou, A., Grieveson, P., Jha, A., J. of mater. Science 26, 3463 (1991)Google Scholar