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Electrical and Chemical Characterization of SiO2 Deposited by Electron Cyclotron Resonance - PECVD.

Published online by Cambridge University Press:  25 February 2011

R.G. Andosca ,
W.J. Varhue  and
S. Titcomb
R.G. Andosca
Affiliation:
Department of Electrical Engineering, University of Vermont, Burlington, Vermont, 05405
W.J. Varhue
Affiliation:
Department of Electrical Engineering, University of Vermont, Burlington, Vermont, 05405
S. Titcomb
Affiliation:
Department of Electrical Engineering, University of Vermont, Burlington, Vermont, 05405
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Abstract

Thin films of silicon dioxide were deposited on (100) Si at low temperatures (room temperature to 375 °C). Oxygen was introduced into the resonance chamber while a dilute silane gas mixture (2% in helium) was fed to a gas ring supported 10 cm above the wafer. Index of refraction, deposition rates, etch rates (for buffered HF), dielectric constant, and oxide breakdown strength were determined as a function of substrate temperature and RF substrate bias. Hydrogen content and Si-O bonding were measured by FTIR spectroscopy. All properties are reported in terms relative to thermally grown oxide.

Film properties improved with increasing substrate temperature and RF substrate bias, sometimes equaling that of thermal oxide. Film quality was the highest for samples deposited at 375 °C, with an applied RF substrate bias.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 489
Copyright
Copyright © Materials Research Society 1991

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References

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