Hostname: page-component-76fb5796d-r6qrq Total loading time: 0 Render date: 2024-04-29T17:55:09.667Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Behavior of Diffused Impurities in Diamond Single Crystals

Published online by Cambridge University Press:  26 February 2011

Dario Narducci  and
Jerome J. Cuomo
Dario Narducci
Affiliation:
IBM World Trade Post-Doctoral Fellow.
Jerome J. Cuomo
Affiliation:
IBM Research Division, T. J. Watson Research Center P.O. Box 218, Yorktown Heights, NY 10598
Get access

Abstract

The dependence of the electrical properties on the evolving doping profile during diffusion processes was studied, as well as the role of the vacancies in determining the electrical properties of diamonds. To this aim, B was deposited on diamond single-crystal by physical vapor deposition. The element was then thermally diffused into diamond at 800°C under helium atmosphere. The deposited layer was finally removed and subsequent annealing cycles were carried out. The diffusion profiles were tracked by Nuclear Analysis Techniques. For comparison, the same element was implanted in diamonds at 70 K and at room temperature. Electrical contacts of different metals were deposited on diamond and the current-voltage and the capacity-voltage characteristics were measured. A comparative analysis of the electrical behavior of implanted and diffused samples was carried out, which elucidated the electronic activity of point defects in diamond.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 365
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Geis, M.W., Rathman, D.D., Ehrlich, D.J., Murphy, R.A. and Lindley, W.T., IEEE Electron Device Lett. 8, 341 (1987).Google Scholar
2. Vasilov, V.S., Radiation Effects 37, 229 (1978).Google Scholar
3. Prins, J.F., Phys. Rev. B 39, 3764 (1989); Nucl. Instr. Methods Phys. Res. B 35, 484 (1988); Phys. Rev. B 38, 5576 (1988); Appl. Phys. Lett. 15, 950 (1982).Google Scholar
4. Roberts, G.I. and Crowell, C.R., J. Appl. Phys. 41, 1767 (1970).Google Scholar
5. Crank, J.C., The Mathematics of Diffusion, (clarendon Press, Oxford, 1956), ch. 3.Google Scholar
6. Glover, G.H., Solid State Electr. 16, 973 (1973).Google Scholar
7. Peak, D., Corbett, J.W. and Bourgoin, J.C., J. Chem. Phys. 65, 1206 (1976).Google Scholar