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Electrical Characterization of Laser-Irradiated 4H-SiC Wafer

Published online by Cambridge University Press:  01 February 2011

I. Salama
Affiliation:
Laser-Aided Manufacturing, Materials and Micro-Processing Laboratory (LAMMMP), School of Optics, Mechanical, Materials, and Aerospace Engineering Department, Center for Research and Education in Optics and Lasers (CREOL), University of Central Florida, Orlando, FL 32816-2700.
N. R Quick
Affiliation:
Applicote Associates, 894 Silverado Court, Lake Mary, FL 32746.
A. Kar
Affiliation:
Laser-Aided Manufacturing, Materials and Micro-Processing Laboratory (LAMMMP), School of Optics, Mechanical, Materials, and Aerospace Engineering Department, Center for Research and Education in Optics and Lasers (CREOL), University of Central Florida, Orlando, FL 32816-2700. Electronic mail: akar@mail.ucf.edu
Gilyong Chung
Affiliation:
Sterling Semiconductor, Inc. 3401 Cragmont Drive, Tampa, FL 33619.
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Abstract

Highly conductive tracks are generated in low-doped epilayers on 4H-SiC wafers using a laserdirect write technique. The current-voltage characteristics are measured to study the effect of the applied voltage on the electric resistance and the surface contact of the irradiated tracks. The effect of multiple irradiations on the electronic properties of the fabricated tracks was investigated and compared with the effect of the conventional annealing process. A laser doping process was used to achieve n-type as well as p-type impurity doping in the substrate. The electronic properties of the doped tracks are measured and compared with those of the untreated wafers. Microstructural observation and surface analysis of the irradiated tracks are studied. Laser fabrication of rectifying contact on SiC substrates is demonstrated.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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