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Electrical Contacts to Polycrystalline B Doped Diamond Films

Published online by Cambridge University Press:  26 February 2011

K. Nishimura ,
K. Das ,
M. Iwase ,
J. T. Glass  and
K. Kobashi
K. Nishimura
Affiliation:
Visiting Scientist from Kobe Steel, Ltd., Japan
K. Das
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695-7907
M. Iwase
Affiliation:
Visiting Scientist from Department of Engineering, Tokai University, 1117, Kitakanabe, Hiratsuka, Kanagawa, Japan, 259-12
J. T. Glass
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695-7907
K. Kobashi
Affiliation:
Electronics Research Laboratory, Kobe Steel, Ltd., Takatsukadai 1-5-5, Nishiku, Kobe, Japan, 673-02
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Abstract

B doped diamond films were synthesized by microwave plasma CVD and electrical contacts were fabricated by R F sputtering. Rc was obtained for Pt, Ni, TaSi2, and Al asdeposited contacts at room temperature. Pt gave the minimum Rc and Al gave the maximum Rc of the metals investigated on films containing a carrier concentration of 5 × 1018/cm3. The minimum Rc, 8.6 × 10−4 Ω cm 2, was obtained on heavily B doped diamond films with a carrier concentration of 2.7 × 1020/cm3. After nnealing at 400 °C, the Rc of Pt contacts on B doped diamond films with a resistivity of 2×104 Ω1 cm decreased by approximately one order of magnitude.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 341
Copyright
Copyright © Materials Research Society 1990

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References

REFRENCES

1. Moazed, K. L., Zeidler, J. R., Taylor, M. J., Zeisse, C. R., and Nguyen, R., Proc. of 1st International Symposium on diamond and diamond like films, Elec. Chem. Soc. 89–12, 446, (1989)Google Scholar
2. Moazed, K. L., Nguyen, R., Zeidler, J. R., IEEE Elect. Dev. Lett. 9,350, (1988)Google Scholar
3. Glover, G. H., Solid State Electronics, 16, 973, (1973)Google Scholar
4 Mead, C. A. and McGill, T. C., Phys. Lett. 58, 4, 249, (1976)Google Scholar
5. Gildenblat, G. Sh., Grot, S. A., Wronsky, C.R., Badzian, A. R., Badzian, T., Appl. Phys. Lett. 53, (7), 586, (1988)Google Scholar
6. Kawarada, H., Yokota, Y., Mori, Y., and Hiraki, A., Proc. of ‘89 spring meeting of the Mater. Res. Soc., “Technology up date on Diamond films”, 95, (1989)Google Scholar
7. Look, D. C., Electrical characterization of GaAs materials and devices, p. 132, (John Wiley & Sons, New York, 1989)Google Scholar
8. Sze, S. M., Physics of semiconductor devices, 2nd ed. p.251, (John Wiley & Sons, New York, 1981)Google Scholar
9. Ya, T.. Kosolapova, , Carbides, p.178, 182, 188 (1971)Google Scholar
10. Kobashi, K., Nishimura, K., Kawate, Y., and Horiuchi, T., Phys. Rev. B, 38,6,4067, (1988)Google Scholar
11. Kern, W. and Puotinen, D. A., RCA Review, June, 187, (1970)Google Scholar
12. Submitted to J. Appl. Phys.Google Scholar
13. Rhoderick, E. H., Williams, R. H., Metal-Semiconductor Contacts, p.109 (Clarendon Press, Oxford,1988)Google Scholar
14. Piano, L. S., Yokota, S., and Ravi, K. V., Proc. of 1st International symposium on diamond and diamond-like films, Elec. Chem. Soc. 89–12 380, (1989)Google Scholar