Hostname: page-component-76fb5796d-x4r87 Total loading time: 0 Render date: 2024-04-26T00:14:43.628Z Has data issue: false hasContentIssue false
  • English
  • Français

Electroabsorption Measurements on Bifacial CIGS Solar Cell Devices

Published online by Cambridge University Press:  31 January 2011

JinWoo Lee ,
Ken Edward Elder ,
William N Shafarman  and
David J. Cohen
JinWoo Lee
Affiliation:
jlee5@uoregon.edu, University of Oregon, Department of Physics, 1274 University of Oregon, Eugene, Oregon, 97403, United States, 1-541-255-6668
Ken Edward Elder
Affiliation:
kelder@uoregon.edu, University of Oregon, Department of Physics, Eugene, Oregon, United States
William N Shafarman
Affiliation:
wns@udel.edu, Institute of Energy Conversion, University of Delaware, Newark, Delaware, United States
David J. Cohen
Affiliation:
dcohen@uoregon.edu, University of Oregon, Department of Physics, Eugene, Oregon, United States
Get access

Abstract

We report the first studies of electroabsorption in Cu(InGa)Se2 (CIGS) solar cell devices. We utilized a bifacial CIGS device with a Ga/(In+Ga) ratio of 0.8 (bandgap of 1.5 eV) deposited onto semi-transparent (40 nm thick) Mo coated glass as the back contact. By modulating the electric field using a small sinusoidal potential of amplitude δV across the CIGS layer, we were able to detect the modulation ΔT of the transmitted light. This was examined as a function of photon energy, DC bias, temperature, and modulation frequency (100 Hz to 10 kHz) and had a maximum amplitude of ΔT/T ≈ 10−5 for δV = 0.3 V. Very different characteristics were obtained for near bandgap light (1.3 eV) compared to photon energies considerable smaller (<0.95 eV). While the latter exhibited a strong temperature and frequency dependence, indicating an important role for deep defects in the effect, the former exhibited very little change with temperature or frequency, indicating the predominance of transitions involving bandtail states. Different metastable states of the CIGS layer produced by prolonged light soaking above the bandgap energy were also examined.

Keywords

absorptionelectronic materialphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1165: Symposium M – Thin-Film Compound Semiconductor Photovoltaics–2009 , 2009 , 1165-M08-08
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Franz, W. Z. Naturforschung 13a, 484 (1958).Google Scholar
2. Keldysh, L. V. Phys. (USSR) 33, 994–1003 (1957), translation: Soviet Phys. JETP 6, 763 (1958).Google Scholar
3. Jiang, L. Wang, Q. and Schiff, E. A. S. Guha and Yang, J. X, Deng, Appl. Phys. Lett. 69, 3063 (1996).Google Scholar
4. Henninger, R. Klaer, J. Siemer, K. Bruns, J. and Braunig, D. J. Appl. Phys. 89, 3049 (2001).Google Scholar
5. Heath, J. T. Cohen, J. D. and Shafarman, W. N. J. Appl. Phys. 95, 1000 (2004).Google Scholar
6. Lee, J. Heath, J. T. Cohen, J. D. and Shafarman, W. N. Mat. Res. Soc. Symp. Proc. 865, 373 (2005).Google Scholar
7. Zhu, K. Schiff, E. A. and Ganguly, G. Mat. Res. Soc. Symp. Proc. 715, 301 (2002).Google Scholar
8. Wang, Q. Crandall, R. S. and Schiff, E. A. in Conf. Rec. of the 21st Photovolt. Spec. Conf., 1113 (1996).Google Scholar
9. Heath, J. T. Cohen, J. D. Shafarman, W. N. Liao, D. X. and Rockett, A. A. Appl. Phys. Lett. 80, 4540 (2002).Google Scholar
10. Yan, Y. Noufi, R. Jones, K. M. Ramanathan, K. Al-Jassim, M. M., and Stanbery, B. J. Appl. Phys. Lett. 87, 121904 (2005).Google Scholar
11. Werner, J. H. Mattheis, J. and Rau, U. Thin Solid Films 480-481, 399 (2005).Google Scholar
12. Lany, S. and Zunger, A. J. Appl. Phys. 100, 113725 (2006).Google Scholar