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Electroless CoWP Barrier/Protection Layer Deposition for Cu Metallization

Published online by Cambridge University Press:  10 February 2011

S. Lopatin ,
Y. Shacham-Diamand ,
V. Dubin ,
P. K. Vasudev ,
J. Pellerin  and
B. Zhao
S. Lopatin
Affiliation:
School of Electrical Engineering and the Cornell Nanofabrication Facility, Cornell University, Ithaca, NY 14853–5401, slopatin@ee.cornell.edu, Tel. 607–255–1438, Fax. 607–254–4565
Y. Shacham-Diamand
Affiliation:
School of Electrical Engineering and the Cornell Nanofabrication Facility, Cornell University, Ithaca, NY 14853–5401, slopatin@ee.cornell.edu, Tel. 607–255–1438, Fax. 607–254–4565
V. Dubin
Affiliation:
AMD, One AMD Place, P.O. Box 3453, Sunnyvale, CA 94008
P. K. Vasudev
Affiliation:
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741
J. Pellerin
Affiliation:
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741
B. Zhao
Affiliation:
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741
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Abstract

A fully encapsulated copper interconnect with CoWP barrier and protection layer can be produced by conformai electroless CoWP barrier layer deposition at the bottom and on the sidewalls of trenches and selective electroless CoWP deposition on in-laid Cu lines. The electroless CoWP deposition is an autocatalytic reaction with activation energy of about 0.985 eV. Deposition rate of about 10 nm/min at 80°C and average surface roughness of 5 nm for 200 nm thick films were measured. CoWP layer with resistivity of 25 μOhms·cm was obtained. Resistivity of electroless CoWP films was decreased from 25 μOhms·cm to 20 μOhms·cm after annealing in vacuum with 10−7 torr at 400°C for 30 min. The RBS spectra of the Cu/CoWP/Co/Si structure formed by electroless CoWP barrier and Cu deposition and annealed at 400°C for 60 min in vacuum 10−7torr showed no interdiffusion in deposited films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 451: Symposium P – Electrochemical Synthesis and Modification , 1996 , 463
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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