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Electroless Deposition of La1−xSrxMnO3 Perovskite Film on Yttria Stabilized Zirconia Substrate

Published online by Cambridge University Press:  10 February 2011

T. Sasaki  and
Y. Matsumoto
T. Sasaki
Affiliation:
National Institute of Materials and Chemical Research (NIMC), Agency of Industrial Science and Technology, MITI, 1–1 Higashi, Tsukuba, Ibaraki 305, Japan.
Y. Matsumoto
Affiliation:
Department of Applied Chemistry and Biochemistry, Faculty of Engineering, Kumamoto University, 2–39–1 Kurokami, Kumamoto 860, Japan.
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Abstract

A LaMnO3 precursor was electrolessly deposited on a YSZ substrate in a solution containing Mn2+, La3+, an oxidizing agent and some additives. Peroxydisulfate was used as the oxidizing agent. The LaMnO3 precursor was an amorphous and hydrous MnO2 which contained La3+ ions. The incorporation of La3+ ions into the precursor oxide film was based on the ion-exchange reaction, where La3+ ions in the solution were exchanged for H+ ions on the deposited amorphous and hydrous MnO2. A La1-xSrxMnO3 precursor was also prepared from the LaMnO3 precursor by the ion-exchange reaction of some of the La3+ ions in the LaMnO3 precursor for Sr2+ ions in the solution. (La0.5Sr0.5)0.75MnO3 perovskite film was obtained from the precursor films on Pt substrate by heat-treatment at 800 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 451: Symposium P – Electrochemical Synthesis and Modification , 1996 , 333
Copyright
Copyright © Materials Research Society 1997

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References

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