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Electroluminescence Device Perspectives of Si+-Implanted SiO2

Published online by Cambridge University Press:  15 February 2011

F. Kozlowski ,
H. E. Porteanu ,
V. Petrova-Koch  and
F. Koch
F. Kozlowski
Affiliation:
Technische Universität München, Physik-Department E 16, D-85747 Garching, Germany
H. E. Porteanu
Affiliation:
Technische Universität München, Physik-Department E 16, D-85747 Garching, Germany
V. Petrova-Koch
Affiliation:
Technische Universität München, Physik-Department E 16, D-85747 Garching, Germany
F. Koch
Affiliation:
Technische Universität München, Physik-Department E 16, D-85747 Garching, Germany
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Abstract

Thermal oxide layers on Si which have been implanted with Si conduct electrical current and emit light. The electroluminescence effect (EL) has an efficiency which is comparable to the best values that have been reported for the porous Si based devices. Generally, the EL spectrum differs substantially from the photoexcited luminescence. It is linked with that excited by external high energy electrons in cathodoluminescence (CL) experiments. We suggest to consider the effect as internal CL. Based on studies of transport and EL characteristic we evaluate the possibilities of an electroluminescent device based on such layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 657
Copyright
Copyright © Materials Research Society 1997

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References

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