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Electron Beam Induced Impurity Electro-Migration in Unintentionally Doped GaN

Published online by Cambridge University Press:  15 February 2011

M. Toth ,
K. Fleischer  and
M. R. Phillips
M. Toth
Affiliation:
Microstructural Analysis Unit, University of Technology, Sydney, PO Box 123, Broadway, NSW 2007, Australia, matthew.phillips@uts.edu.au
K. Fleischer
Affiliation:
On leave from Technical University of Berlin
M. R. Phillips
Affiliation:
Microstructural Analysis Unit, University of Technology, Sydney, PO Box 123, Broadway, NSW 2007, Australia, matthew.phillips@uts.edu.au
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Abstract

Electron beam induced electromigration of ON+ and H+ impurities in unintentionally n-doped GaN was investigated using cathodoluminescence (CL) kinetics profiling, CL imaging of regions pre-irradiated with a stationary electron beam, and wavelength dispersive x-ray spectrometry (WDS). The presented results (i) illustrate induced impurity diffusion in wide bandgap semiconductors, (ii) provide experimental evidence for the (VGa-ON)2- model of yellow luminescence in GaN with low Si content (ii) confirm the roles of 0 in frequently reported bound exciton and donor-acceptor pair emissions and (iv) suggest the involvement of ON+ and hydrogenated gallium vacancies in a blue emission in autodoped GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.30
Copyright
Copyright © Materials Research Society 1999

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