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Electron Beam Processing of ZnGeP2: A Nonlinear Optical Material for the Infrared

Published online by Cambridge University Press:  21 February 2011

P.G. Schunemann ,
P.J. Drevinsky ,
M.C. Ohmer ,
W.C. Mitchel  and
N.C. Fernelius
P.G. Schunemann
Affiliation:
Lockheed Sanders Inc., MER15-1813, P.O. Box 868, Nashua, NH 03061–0868
P.J. Drevinsky
Affiliation:
Phillips Laboratory, Hanscom AFB, MA 01731–2090
M.C. Ohmer
Affiliation:
Wright Laboratory, WL/MLPO, Wright-Patterson AFB, OH 45433–7707
W.C. Mitchel
Affiliation:
Wright Laboratory, WL/MLPO, Wright-Patterson AFB, OH 45433–7707
N.C. Fernelius
Affiliation:
Wright Laboratory, WL/MLPO, Wright-Patterson AFB, OH 45433–7707
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Abstract

Zinc germanium phosphide, an important frequency-conversion material for producing mid-infrared lasers, is plaqued by a detect-related absorption band extending from the fundamental edge (0.62 microns) to ∼3 microns. The level of absorption varies with melt composition, and can be reduced by post-growth annealing treatments. In these experiments, further reduction of the near-band-edge absorption was achieved by irradiating with 1-1.5 MeV electrons at cumulative fluence levels up to 2.75xlOI8cm2. Ge-rich, ZnP2-rich, and both as-grown and annealed stoichiometric crystals were studied. The near-edge absorption of the higher-loss, nonstoichiometric samples decreased monotonically with each subsequent irradiation, whereas the absorption in the lower-loss, stoichiometric samples was minimized after cumulative electron fluences of 2 x 10I8cnv2 and 1 x 10I8cm2 for as-grown and annealed material respectively. The minimum absorption coefficient achieved at 1/im was ∼4.4cnr’ in both stoichiometric samples, representing a factor two decrease for the as-grown crystal. Further exposure after reaching saturation served only to increase the losses at longer wavelengths.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 729
Copyright
Copyright © Materials Research Society 1995

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References

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