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Electronic and Mechanical Properties of Dislocations in Semiconductors

Published online by Cambridge University Press:  15 February 2011

P B Hirsch
P B Hirsch*
Affiliation:
Department of Metallurgy and Science of Materials, University of Oxford, Parks Road, Oxford, England.
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Abstract

It has been known for some time that the velocity of dislocations in semiconductors depends strongly on the concentration of electrically active impurities. Various explanations based on different models of the electronic structure of the dislocations have been proposed; they involve the dependence of the formation energy and/or activation energy of migration of dislocation kinks on the Fermi level. A review will be presented of these theories and of recent structural models of dislocation cores and kinks.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 257
Copyright
Copyright © Materials Research Society 1981

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