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Electronic Structure of Adsorbed Trimethylaluminum on Clean Si(100) Surfaces

Published online by Cambridge University Press:  25 February 2011

T. Motooka ,
P. Fons  and
J. E. Greene
T. Motooka
Affiliation:
Department of Materials Science, University of Illinois, Urbana, IL 61801
P. Fons
Affiliation:
Department of Materials Science, University of Illinois, Urbana, IL 61801
J. E. Greene
Affiliation:
Department of Materials Science, University of Illinois, Urbana, IL 61801
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Abstract

The electronic structure of dimerized trimethylaluminum (TMA), Al2(CH3)6. adsorbed on Si(100) surfaces has been investigated using molecular orbital (MO) calculations based on a cluster description of TMA/Si(100). The calculated results suggest that the interactions between TMA and the Si(100) surface are described by overlap of the TMA electron-deficient bond and Si surface dangling-bond orbitals. The electron-deficient bond orbital is the highest occupied MO of TMA and acts as an electron acceptor for charge transfer from a surface Si atom to TMA consistent with observed core-level and valence photoelectron spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 345
Copyright
Copyright © Materials Research Society 1989

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References

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