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The Electronic Structure of the “0.15 eV” Cu Acceptor Level in GaAs

Published online by Cambridge University Press:  25 February 2011

E. Janzén ,
M. Linnarsson ,
B. Monemar  and
M. Kleverman
E. Janzén
Affiliation:
Linköping University, Dept. of Physics and Measurement Technology S-58l 83 LINKOPING, Sweden
M. Linnarsson
Affiliation:
Linköping University, Dept. of Physics and Measurement Technology S-58l 83 LINKOPING, Sweden
B. Monemar
Affiliation:
Linköping University, Dept. of Physics and Measurement Technology S-58l 83 LINKOPING, Sweden
M. Kleverman
Affiliation:
Dept. of Solid State Physics, University of Lund, S-22l 00 LUND, Sweden
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Abstract

Cu diffused GaAs samples have been investigated using different kinds of FΠR techniques and photoluminescence. The results suggest that tne “0.15 eV” level originates from the ioruzation of a neutral, nearly substitutional Cu acceptor at a Ga site. Furthermore, the results indicate a distortion in the [100] direction. The ground state binding energy obtained from the effective-mass-like excited states is 157.8 meV at 6K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 169
Copyright
Copyright © Materials Research Society 1990

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