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Electronic Transport and the Density of States Distribution in a-(Si, Ge):H, F Alloys

Published online by Cambridge University Press:  28 February 2011

S. Aljishi ,
Z E. Smith ,
D. Slobodin ,
J. Kolodzey ,
V. Chu ,
R. Schwarz  and
S. Wagner
S. Aljishi
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
Z E. Smith
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
D. Slobodin
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
J. Kolodzey
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
V. Chu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
R. Schwarz
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
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Abstract

The electronic and optical properties of amorphous silicon-germanium alloys produced by d.c. and r.f. glow discharge are reported. Data on the sub-gap absorption, dark and photo conductivities, drift mobilities and drift mobility-lifetime products are used to propose a density of states model.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 269
Copyright
Copyright © Materials Research Society 1986

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References

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