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Electron-Phonon Scattering in Si-Doped GaN

Published online by Cambridge University Press:  10 February 2011

C. Wetzel ,
W. Walukiewicz  and
J. W. Ager III
C. Wetzel
Affiliation:
Lawrence Berkeley National Laboratory, Materials Science Divison, MS 2–200, 1 Cyclotron Road, Berkeley, CA 94720, USA, C_Wetzel@LBL.GOV
W. Walukiewicz
Affiliation:
Lawrence Berkeley National Laboratory, Materials Science Divison, MS 2–200, 1 Cyclotron Road, Berkeley, CA 94720, USA, C_Wetzel@LBL.GOV
J. W. Ager III
Affiliation:
Lawrence Berkeley National Laboratory, Materials Science Divison, MS 2–200, 1 Cyclotron Road, Berkeley, CA 94720, USA, C_Wetzel@LBL.GOV
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Abstract

Phonon-plasmon scattering in non-resonant Raman spectroscopy is used to determine the free electron concentration in Si doped GaN films. For various doping concentration and variable temperature the correlation with magneto-transport data is established. The freeze-out of the carrier concentration at low temperature is thus observed in a purely optical detection scheme. We observe a very long transient time of several hours for the carrier concentration as a reaction to temperature variation. This indicates an indirect capture and emission process with a very small cross section. The value of the Faust-Henry coefficient is determined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 567
Copyright
Copyright © Materials Research Society 1997

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References

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