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Electro-optic and thermal studies of multi-quantum well light emitting diodes in InGaN/GaN/sapphire structure.

Published online by Cambridge University Press:  01 February 2011

Jeong Park ,
Moo Whan Shin  and
Chin C. Lee
Jeong Park
Affiliation:
University of California, Irvine Electrical Engineering and Computer Science Irvine, CA 92697–2625
Moo Whan Shin
Affiliation:
Semiconductor Materials & Devices Lab Department of Ceramic Engineering, Myong Ji University, Kyungido, Korea 449–728
Chin C. Lee
Affiliation:
University of California, Irvine Electrical Engineering and Computer Science Irvine, CA 92697–2625
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Abstract

We present an electrical model for quantum-well light emitting diodes (LEDs) with a current spreading layer. The LEDs studied have a Multi-Quantum Well (MQW) between p-GaN and the n-GaN grown on sapphire. The model consists of a diode connected with a series resistor resulting from the current spreading layer. Using the model, the I-V curve of the diode itself is extracted from the measured LED I-V curve. The model also includes a current equation for the diode itself which was subsequently sought to match the extracted I-V curve. In the seeking process, junction temperature (Tj) rather than case temperature (Tc) was used in the equation. The diode model allows one to calculate the reduction on conversion efficiency caused by the current spreading layer. Results show that the current spreading layer causes 20% of the efficiency reduction at Tj = 107°C. The model can be used to optimize the conversion efficiency by balancing the transparency and the resistance of current spreading layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E10.4
Copyright
Copyright © Materials Research Society 2005

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