Skip to main content

The Element Depth Profiles in Ultrathin Silicon Oxynitride Films

  • Igor P. Asanov (a1), Jinhak Choi (a1), Youngsu Chung (a1), Jaemin Choi (a1) and Jaecheol Lee (a1)...

Distribution of nitrogen in the thin silicon oxynitride films (less than 5 nm) obtained by plasma nitridation of SiO2 has been studied by non-destructive angular dependent XPS. For obtaining information about the element distribution in-depth the regularization technique has been applied. It is shown that the depth of nitrogen penetration increases with decreasing the SiO2 film thickness. In this case the maximum of the nitrogen distribution is enhanced and shifted to the Si-SiO2 interface. The results are compared with depth-profiling obtained by sputtering and wet chemical etching. The dependence of the binding energies on the film thickness has been studied. The influence of different factors on the chemical shift in the ultrathin films has been analyzed.

Hide All
Hori, T., Gate dielectrics and MOS ULSIs: principles, technologies, and applications, (Springer –Verlag, Berlin, Heidelberg, 1997) p. 352.
2 Gusev, E.P., Lu, H.-C., Garfunkel, E.L., Gustafsson, T., and Green, M.L., IBM J. Res. Develop. 43, 265286 (1999);
Lucovsky, G., ibid, 43, 301326 (1999).
3 Shallenberger, J.R., Cole, D.A., and Novak, S.W., J. Vac. Sci. Technol. A17, 1086 (1999).
4 Cerofolini, G.F., Camalleri, M., Galati, C., Lorenti, S., Renna, L., Viscuso, O., Condorelli, G.G., and Fragalà, I.L., Appl. Phys. Lett. 79, 23782380 (2001).
5 Yao, Z.-Q., J. Appl. Phys. 78, 29062912 (1995).
6 Rignanese, G.-M., Pasquarello, A., Charlier, J.-C., Gonze, X., and Car, R., Phys. Rev. Lett. 79, 51745177 (1997).
7 Rignanese, G.-M. and Pasquarello, A., Phys. Rev. B63, 075307–1–10 (2001).
8 Takahashi, T., Mizokuro, T., Nishioka, Y., and Kobayashi, H., Surf. Sci. 518, 7280 (2002)
9 Pasquarello, A., Hybertsen, M.S., and Car, R., Phys. Rev. B53, 1094210950 (1996); Phys. Rev. Lett. 74, 1024–1027 (1995).
10 Powell, C.J. and Jablonski, A.., NIST Electron Effective-Attenuation-Length Database–Version 1.0, (National Institute of Standards and Technology, Gaithersburg, MD, 2001).
11 Cherkashinin, G. Yu., J. Electron Spectros. Relat. Phenom. 74, 6775 (1995)
12 Cumpson, P.J., Appl. Surf. Sci. 144–145, 1620 (1999).
13 Hansen, P.C., Numerical Algorithms 6, 135 (1994).
14 Carr, E.C. and Buhrman, R.A., Appl. Phys. Lett. 63, 5456 (1993).
15 Browning, R., Sobolewski, M.A., and Helms, C.R., Phys. Rev. B38, 1340713410 (1988).
16 Keister, J.W., Rowe, J.E., Kolodziej, J.J., Niimi, H., Tao, H.-S., Madey, T.E., and Lucovsky, G., J. Vac. Sci. Technol. A17, 12501257 (1999).
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed