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Energy Loss Rates for Light Holes in Ingaas/GaAs Strained-Layer Single Quantum Wells

Published online by Cambridge University Press:  26 February 2011

M. C. Smith ,
E. D. Jones ,
I. J. Fritz ,
T. J. Drummond ,
T. E. Zipperian  and
J. E. Schirber
M. C. Smith
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185–5800
E. D. Jones
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185–5800
I. J. Fritz
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185–5800
T. J. Drummond
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185–5800
T. E. Zipperian
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185–5800
J. E. Schirber
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185–5800
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Abstract

Energy relaxation rates for light holes in InGaAs/GaAs strained layer quantum wells are measured. Two techniques were used to measure light hole temperatures as a function of power dissipated in the hole gas. For Th < 20K, Shubnikov-de Haas oscillations were used and for Th> 20K, a photoluminescence technique was employed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 559
Copyright
Copyright © Materials Research Society 1988

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References

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