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Enhanced Boron Diffusion in Silicon with BF2-Implanted CoSi2 AS Diffusion Source and Under Rapid Thermal Annealing

Published online by Cambridge University Press:  21 February 2011

J. Lin ,
W. Chen ,
A. Sultan ,
S. Banerjee  and
J. Lee
J. Lin
Affiliation:
Microelectronics Research Center, University of Texas, Austin, TX 78712
W. Chen
Affiliation:
Microelectronics Research Center, University of Texas, Austin, TX 78712
A. Sultan
Affiliation:
Microelectronics Research Center, University of Texas, Austin, TX 78712
S. Banerjee
Affiliation:
Microelectronics Research Center, University of Texas, Austin, TX 78712
J. Lee
Affiliation:
Microelectronics Research Center, University of Texas, Austin, TX 78712
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Abstract

In this paper, B diffusion in Si with BF2-implanted CoSi2 as a diffusion source has been studied using SIMS analysis. The concentration-dependent diffusivity of B in single crystal Si is obtained by Boltzmann-Matano analysis. The data show that the B diffusivity in single crystal Si is more than one order of magnitude higher than the published data where a conventional B diffusion source (BN or B2H2) is used. Anomalous concentration dependence of the B diffusivity in Si for ultra-shallow B SIMS profiles was also observed. Possible physical mechanisms which involve implant damage in the Si substrate, the generation of point defects such as Si vacancies and interstitials during silicide formation, and B-defect interactions are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 265
Copyright
Copyright © Materials Research Society 1993

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References

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