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Enhanced Oxidation of TiSi2 Films by As+ Implantation*

Published online by Cambridge University Press:  26 February 2011

O. W. Holland  and
D. Fathy
O. W. Holland
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
D. Fathy
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

The influence of As+-ion implantation on the oxidation of TiSi2 films is investigated. It will be shown that implantation leads to a greatly increased rate of oxidation in a dry O2 ambient. Low-temperature oxidation of the implanted films not only results in substantial oxidation of the films, but completely alters the films' morphology. Different implantation techniques were used to isolate the effects of ion-induced damage from chemical effects, so that each could be separately studied. It will be shown that neither chemical nor damage effects are able, by themselves, to account for the enhanced oxidation. Rather, a model is proposed to explain the role of implantation in the oxidation process which depends on a synergistic relation between these two effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 267
Copyright
Copyright © Materials Research Society 1988

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract DE-ACO5-840R21400 with Martin Marietta Energy Systems, Inc.

References

REFERENCES

1. Lau, C.K., See, Y.C., Scott, D.B., Bridges, J.M., Perna, S.M., and Davies, R.D., IEDM Tech. Dig. p. 714 (1982).Google Scholar
2. Kwong, D.L. and Alvi, N.S., J. Appl. Phys. 60, 688 (1986).Google Scholar
3. Fathy, D., Holland, O.W., Appleton, B.R., and Stephenson, T.S., Mater. Lett. 5, 315 (1987).Google Scholar
4. Mizuno, T., Matsumoto, Y., Sawada, S., Shinozaki, S., and Ozawa, O., IEDM Tech Dig. p. 250 (1985).Google Scholar
5. Holland, O.W., Fathy, D., Withrow, S.P., and Sjoreen, T.P., J. Vac. Sci. Technol. A, (to be published).Google Scholar
6. Deal, B.E. and Grove, A.S., J. Appl. Phys. 36, 3770 (1965).Google Scholar
7. Gas, P., Deline, V., d'Heurle, F.M., Michel, A. and Scilla, G., J. Appl. Phys. 60, 1634 (1986).Google Scholar