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Enhanced UV Photon-response of Tin Nano Cluster Loaded- laser Irradiated ZnO Thin film detector

Published online by Cambridge University Press:  02 March 2011

Rashmi Menon
Affiliation:
Electronic Materials and Devices Laboratory, Department of Physics and Astrophysics, University of Delhi, Delhi-110007, India
K. Sreenivas
Affiliation:
Electronic Materials and Devices Laboratory, Department of Physics and Astrophysics, University of Delhi, Delhi-110007, India
Vinay Gupta
Affiliation:
Electronic Materials and Devices Laboratory, Department of Physics and Astrophysics, University of Delhi, Delhi-110007, India
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Abstract

Zinc Oxide (ZnO), II-VI compound semiconductor, is a promising material for ultraviolet (UV) photon sensor applications due to its attractive properties such as good photoconductivity, ease processing at low temperatures and excellent radiation hardness. The rf magnetron sputtering is a suitable deposition technique due to better control over stoichiometry and deposition of uniform film. Studies have shown that the presence of surface defects in ZnO and subsequently their passivation are crucial for enhanced photo-response characteristics, and to obtain the fast response speed. Worldwide efforts are continuing to develop good quality ZnO thin films with novel design structures for realization of an efficient UV photon sensor. In the present work, UV photon sensor is fabricated using a ZnO thin films deposited by rf magnetron sputtering on the corning glass substrate. Photo-response, (Ion/Ioff) of as-grown ZnO film of thickness 100 nm is found to be 3×103 with response time of 90 ms for UV intensity of 140 μW/cm2 (λ = 365 nm). With irradiation on ZnO thin film by pulsed Nd:YAG laser (forth harmonics 266 nm), the sensitivity of the UV sensor is found to enhance. The photo-response increases after laser irradiation to 4x104 with a fast response speed of 35 ms and attributed to the change in surface states and the native defects in the ZnO thin film. Further, enhancement in the ultraviolet (UV) photo-response (8×104) of detector was observed after integrating the nano-scale islands of Sn metal on the surface of laser irradiated ZnO thin film.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Jagadish, C. and Pearton, S.J., Zinc Oxide Bulk, Thin film and Nanostructures (Elsevier, New York, 2006)Google Scholar
2. Carcia, P. F., McLean, R. S., Reilly, M. H. and Nunes, G., Appl. Phys. Lett. 82, 1117 (2003)Google Scholar
3. Yadav, H. K., Sreenivas, K., and Gupta, V., Appl. Phys. Lett. 90, 172113 (2007)` Google Scholar
4. Tomar, M., Gupta, V., Sreenivas, K., Mansingh, A., IEEE Transactions on Devices and Materials Reliability, 5, 1530 (2005)Google Scholar
5. Lao, C. S., Kuang, Q., Wang, Z. L., Park, M. C. and Deng, Y., Appl. Phys. Lett., 90, 262107 (2007)Google Scholar
6. Martins, R., Fortunato, E., Nunes, P., Ferreira, I., Marques, A., Bender, M., Katsarakis, N., Cimalla, V. and Kiriakidis, G., J. Appl. Phys., 96, 1398 (2004)Google Scholar
7. P Singh, S., Arya, S. K., Pandey, P., Mahlotra, B. D., Saha, S., Sreenivas, K., Gupta, V., Appl. Phys. Lett., 91, 063901 (2007)Google Scholar
8. Yadav, H. K., Sreenivas, K., and Gupta, V., J. Appl. Phys., 99, 083507 (2006)Google Scholar
9. Chen, J. J., Yu, M. H., Zhou, W. L., Sun, K. and Wang, L. M., Appl. Phys. Lett., 87, 173119 (2005)Google Scholar
10. Studenikin, S. A., Golego, N., and Cocivera, M., J. Appl. Phys. 87, 2413 (2002)Google Scholar
11. Zhang, D. H., J. Phys. D 28, 1273 (1995).Google Scholar
12. Moazzami, K., Murphy, T. E., Phillips, J. D., Cheung, M. C. K., and Cartwright, A. N., Semicond. Sci. Technol. 21, 717 (2006).Google Scholar
13. Porter, H. L., Cai, A. L., Muth, J. F., and Narayan, J., Appl. Phys. Lett. 86, 211918 (2005).Google Scholar
14. Bai, X., Wang, E. G., Gao, P., and Wang, Z. L., Nano Lett. 3, 1147 (2003).Google Scholar
15. Lee, C. J., Lee, T. J., Lyu, S. C., Zhang, Y., Ruh, H., and Lee, H. J., Appl. Phys. Lett. 81, 3648 (2002).Google Scholar