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Enhancement of Photocarrier Lifetime Due to Charge Separation in a-Si:H/a-Ge:H Superlattices

Published online by Cambridge University Press:  26 February 2011

C. R. Wronski ,
T. Tiedje  and
B. Abeles
C. R. Wronski
Affiliation:
Exxon Research and Engineering, Route 22 East Annandale, NJ 08801
T. Tiedje
Affiliation:
Exxon Research and Engineering, Route 22 East Annandale, NJ 08801
B. Abeles
Affiliation:
Exxon Research and Engineering, Route 22 East Annandale, NJ 08801
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Abstract

The lifetime of photogenerated electrons in a-Ge:H/a-Si:H multilayer structures with layers about 100Å thick, is enhanced by two orders of magnitude above the value in bulk a-Ge:H. This lifetime enhancement effect is explained by charge separation produced by layers, due to the assymmetry in the conduction and valence band offsets at the interfaces. The peak in the electron lifetime as a function of superlattice periodicity is determined by a trade-off between the electron tunneling rate into the a-Si:H barriers and electrostatic repulsion of holes due to photo-induced space charge.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 635
Copyright
Copyright © Materials Research Society 1987

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References

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