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Epitaxial Ge/GaAs Heterostructures by Scanned CW Laser Annealing of a-GE Layers on GaAS

Published online by Cambridge University Press:  15 February 2011

J.E. Greene ,
K.C. Cadien ,
D. Lubben ,
G.A. Hawkins ,
G.R. Erikson  and
J.R. Clarke
J.E. Greene
Affiliation:
Departments of Metallurgy, the Coordinated Science Laboratory and the Materials, Research Laboratory, University of Illinois, Urbana, Illinois 61801
K.C. Cadien
Affiliation:
Departments of Metallurgy, the Coordinated Science Laboratory and the Materials, Research Laboratory, University of Illinois, Urbana, Illinois 61801
D. Lubben
Affiliation:
Departments of Metallurgy, the Coordinated Science Laboratory and the Materials, Research Laboratory, University of Illinois, Urbana, Illinois 61801
G.A. Hawkins
Affiliation:
Eastman Kodak Research Laboratories, Rochester, NY 14603
G.R. Erikson
Affiliation:
Eastman Kodak Research Laboratories, Rochester, NY 14603
J.R. Clarke
Affiliation:
Eastman Kodak Research Laboratories, Rochester, NY 14603
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Abstract

Epitaxial regrowth of Ge/GaAs heterostructures by scanned laser annealing of amorphous Ge films on GaAs substrates has been studied as a function of laser power and scan rate. At least eight regimes representing different film regrowth characteristics were observed. Of these, two were of primary interest. At low powers (between~1.6 and 3.2 W for a beam diameter of~40 μm) and scan rates between 1 and 400 cm/sec, polycrystalline Ge with a (100) preferred orientation was formed by an “explosive” crystallization mechanism. At higher powers, and over a scan rate range of 25 to 400 cm/sec, single crystal metastable (GaAs)1−x Gexalloys were obtained by liquid phase regrowth. Typical film resistivities, ρ, were as follows: as-deposited ρ=180Ωcm; polycrystalline films, ρ=3 × 10−2 Ωcm; single crystal films,ρ=9×10−4Ωcm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 701
Copyright
Copyright © Materials Research Society 1982

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References

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