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Epitaxial Growth of Ba1−xSr,TiO3 Films on Si by Pulsed Laser Deposition and Their Dielectric Properties

Published online by Cambridge University Press:  15 February 2011

Myung-Bok Lee ,
Masashi Kawasaki ,
Mamoru Yoshimoto ,
Bum-Ki Moon ,
Hiroshi Ishiwara  and
Hideomi Koinuma
Myung-Bok Lee
Affiliation:
Research Laboratory of Engineering Materials, and Tokyo Institute of Technolgy, 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan
Masashi Kawasaki
Affiliation:
Research Laboratory of Engineering Materials, and Tokyo Institute of Technolgy, 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan
Mamoru Yoshimoto
Affiliation:
Research Laboratory of Engineering Materials, and Tokyo Institute of Technolgy, 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan
Bum-Ki Moon
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technolgy, 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan
Hiroshi Ishiwara
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technolgy, 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan
Hideomi Koinuma
Affiliation:
Research Laboratory of Engineering Materials, and Tokyo Institute of Technolgy, 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan
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Abstract

Dielectric Ba1−xSrxTiO3 films were heteroepitaxially grown on Si (100) substrates by employing an epitaxial TiN interlayer. The crystallinity and surface morphology were investigated for the films prepared at various substrate temperatures and oxygen pressures. BaTiO3 and SrTiO3 films grown at 650°C and 550°C, respectively, at oxygen pressure of ∼105Torr had good crystallinity and very smooth surface morphology as observed by scanning electron microscopy and atomic force microscopy. Sharp interfaces with little interdiffusion of atoms were observed for these films by secondary ion mass spectrometry. Dielectric properties were evaluated for metal-insulator-metal capacitor structures, and revealed to be closely related to the crystallinity and surface morphology of films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 521
Copyright
Copyright © Materials Research Society 1995

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References

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