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Epitaxial Growth of B-Doped SiGe Films Using Si-GeH4-B2H6 MBE

Published online by Cambridge University Press:  21 February 2011

Yasuo Kunii
Yasuo Kunii*
Affiliation:
NTT LSI Laboratories, 3–1 Morinosato Wakamiya. Atsugt-shi, Kanagawa, 243–01, Japan
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Abstract

High-crystalline-quality B-doped SiGe films are epitaxial-ly grown on Si(100) substrates using the Si-GeH4-B2H6 MBE system. Both Ge and B profiles in the B-doped SiGe layer are readily controlled using the present system. This technique should be very promising in the bandgap engineering of SiGe base HBTs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 559
Copyright
Copyright © Materials Research Society 1992

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