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Epitaxial Growth of Ferroelectric Pb(Mgl/3Nb2/3)03 Film by Sol-Gel Method

Published online by Cambridge University Press:  25 February 2011

Kumi Okuwada
Affiliation:
Toshiba Corporation, Research and Development Center, I Komukai Toshiba-cho, Saiwai-ku, Kawasaki, 210, Japan
Shin-Ichi Nakamura
Affiliation:
Toshiba Corporation, Research and Development Center, I Komukai Toshiba-cho, Saiwai-ku, Kawasaki, 210, Japan
Motomasa Imai
Affiliation:
Toshiba Corporation, Research and Development Center, I Komukai Toshiba-cho, Saiwai-ku, Kawasaki, 210, Japan
Keiichi Kakuno
Affiliation:
Yokohama National University, 156 Tokiwadai Hodogaya-ku, Yokohama, 240, Japan
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Abstract

Ferroelectric thin films, which are Pb(Mgl/3Nb2/3)03 (PMN) and Pb(Mgl/3Nb2/3)03 - PbTiO3 (PMN-PT) in the perovskite phase, were obtained by the sol-gel method with metal alkoxides. The films had highly preferred orientation on substrates whose interplanar spacings are close to that for the perovskite structures in PMN and PMN-PT. Epitaxial growth process in PMN film was investigated.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

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