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Epitaxial Growth of NiSi2 on (011)Si

Published online by Cambridge University Press:  22 February 2011

L.J. Chen ,
W.T. Lin  and
M.B. Chang
L.J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC.
W.T. Lin
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC.
M.B. Chang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC.
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Abstract

Epitaxial growth of NiSi2 on (011)Si was investigated by the transmission electron microscopy. Both epitaxial and twin related NiSi2 were formed, with the former being predominant, in samples annealed at 850°C for 1/2 h. The silicides were faceted with {111} interfaces being more prominent than {100} interfaces. Interfacial dislocations were found to be of edge type with 1/6<112> Burgers vectors. The average spacing is about 700 Å which is very close to the theoretically expected value 670 Å.

The absence of twins formed on (111) and (111) planes for (011) samples as well as the results obtained for (001) and (111) specimens suggest that there exists a critical resolved shear stress at the interface for the initiation of the formation of twin related NiSi2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 447
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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