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Epitaxial Growth of TiN Films on (100) Silicon Substrates by Laser Physical Vapor Deposition

Published online by Cambridge University Press:  01 January 1992

P. Tiwari ,
T. Zheleva  and
J. Narayan
P. Tiwari
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–7916
T. Zheleva
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–7916
J. Narayan
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–7916
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Abstract

We have synthesized epitaxial TiN films having low resistivity on (100) silicon substrates using pulsed laser deposition method. The TiN films were characterized using X-ray diffraction, Rutherford back-scattering, four-point-probe ac resistivity, high resolution transmission electron microscopy techniques and epitaxial relationship was found to be <100> TiN // <100> Si. TiN films showed 10–20% channeling yield. In the plane, four unit cells of TiN match with three unit cells of silicon with less than 4.0% misfit. This domain matching epitaxy provides a new mechanism of epitaxial growth in systems with large lattice misfits. Room-temperature resistivity of these films was found to be about 15 μΩ-cm. Implications of low-resistivity epitaxial TiN in silicon device fabrication are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 349
Copyright
Copyright © Materials Research Society 1993

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References

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