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Epitaxial Growth of ZrO2 on GaN by MOMBE for High Dielectric Material Applications

Published online by Cambridge University Press:  01 February 2011

Xing Gu ,
Jinqiao Xie ,
Serguei Chevtchenko ,
Natalia Izyumskaya ,
Vataliy Avrutin  and
Hadis Morkoç
Xing Gu
Affiliation:
gux@vcu.edu, Virginia Commonwealth University, Electrical Engineering, 601 W.Main Street, Dept.Electrical Engineering, Richmond, VA, 23284, United States
Jinqiao Xie
Affiliation:
xiej@vcu.edu, Virginia Commonwealth University, Dept. of Electrical and Computer Engineering, 601 W. Main Street, Richmond, VA, 23284, United States
Serguei Chevtchenko
Affiliation:
chevtchenkos@vcu.edu, Virginia Commonwealth University, Dept. of Electrical and Computer Engineering, 601 W. Main Street, Richmond, VA, 23284, United States
Natalia Izyumskaya
Affiliation:
nIzyumskaya@vcu.edu, Virginia Commonwealth University, Dept. of Electrical and Computer Engineering, 601 W. Main Street, Richmond, VA, 23284, United States
Vataliy Avrutin
Affiliation:
vavrutin@vcu.edu, Virginia Commonwealth University, Dept. of Electrical and Computer Engineering, 601 W. Main Street, Richmond, VA, 23284, United States
Hadis Morkoç
Affiliation:
hmorkoc@vcu.edu, Virginia Commonwealth University, Dept. of Electrical and Computer Engineering, 601 W. Main Street, Richmond, VA, 23284, United States
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Abstract

Epitaxial growth of ZrO2 has been achieved on MOCVD grown GaN template by oxides MBE using a reactive H2O2 oxygen source. Using the low temperature buffer followed by high temperature in-situ annealing and high-temperature growth, monoclinic, (100)-oriented ZrO2 thin film with decent structural quality and smooth surface morphology was achieved. The full width at half maximum of ZrO2 (100) rocking curve is 0.4 arc degree and the rms roughness for a 5μm by 5 μm AFM scan is 4.1Å. The use of epitaxially grown ZrO2 in the AlGaN/GaN HFET structure as a gate dielectric layer have resulted in the increase of the saturation-current density and pinch-off voltage as well as showed near symmetrical gate-drain I-V behavior.

Keywords

dielectricmolecular beam epitaxy (MBE)epitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I06-01
Copyright
Copyright © Materials Research Society 2007

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References

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