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Epitaxial Stabilization in Thin Films of Oxides

Published online by Cambridge University Press:  11 February 2011

A. Kaul
Affiliation:
Chemistry Department
O. Gorbenko
Affiliation:
Chemistry Department
I. Graboy
Affiliation:
Chemistry Department
M. Novojilov
Affiliation:
Department of Materials Science, Moscow State University, 119899 Moscow, Russia
A. Bosak
Affiliation:
Department of Materials Science, Moscow State University, 119899 Moscow, Russia
A. Kamenev
Affiliation:
Department of Materials Science, Moscow State University, 119899 Moscow, Russia
S. Antonov
Affiliation:
Chemistry Department
I. Nikulin
Affiliation:
Department of Materials Science, Moscow State University, 119899 Moscow, Russia
A. Mikhaylov
Affiliation:
Chemistry Department
M. Kartavtzeva
Affiliation:
Department of Materials Science, Moscow State University, 119899 Moscow, Russia
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Abstract

This paper is a survey of recent author's results obtained by the authors. It shows that many oxides can be obtained as thin epitaxial films in spite of their thermodynamic instability in bulk state at the film deposition conditions. This new synthetic approach, named epitaxial stabilization, is based on free energy gain due to structural coherence at the film/substrate interface. The epitaxial stabilization can be effectively used to enlarge the spectrum of new functional materials.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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