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EPR Studies of DX Center Related Paramagnetic States in Ga0.69 Al0.31 As:Sn

Published online by Cambridge University Press:  25 February 2011

H.J. Von Bardeleben ,
J.C. Bourgoin ,
P. Basmaji  and
P. Gibart
H.J. Von Bardeleben
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supérieure, Centre National de la Recherche Scientifiquea, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France
J.C. Bourgoin
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supérieure, Centre National de la Recherche Scientifiquea, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France
P. Basmaji
Affiliation:
Instituto de Fisica e Quimica de Sao Carlos, USP Cx Postal 369, 13560 Sao Carlos, Brazil
P. Gibart
Affiliation:
Laboratoire de Physique du Solide et énergie Solaire, Centre National de la Recherche Scientifique, Sophia Antipolis, 06560 Valbonne, France
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Abstract

The electron paramagnetic resonance study of the DX center in Sn doped direct gap Ga0.69Al0.31 As shows the existence of a shallow effective mass like excited configuration of this defect. The photoexcitation spectrum for this transformation has a threshold at 0.8 eV; the photoionization of the DX center is not a transition to the lowest r conduction band as previously assumed. After photoexcitation additional paramagnetic defects are observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 439
Copyright
Copyright © Materials Research Society 1989

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