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Evaluation of LSCO Electrodes for Sensor Protection Devices

Published online by Cambridge University Press:  10 February 2011

R. W. Schwartz ,
M. T. Sebastian  and
M. V. Raymond
R. W. Schwartz
Affiliation:
The Gilbert C. Robinson Department of Ceramic and Materials Engineering Clemson University Clemson, SC
M. T. Sebastian
Affiliation:
The Gilbert C. Robinson Department of Ceramic and Materials Engineering Clemson University Clemson, SC
M. V. Raymond
Affiliation:
DigitalDNA™ Laboratories, Motorola Inc. Austin, TX
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Abstract

We have evaluated lanthanum strontium cobalt oxide (La0.5OSr0.50COOx; LSCO 50/50) as a candidate “transparent” electrode for use in an electrostatic shutter-based infrared sensor protection device. The device requires that the electrode be transparent (80% transmission) and have moderate sheet resistance (300 – 500 Δ/sq.). To meet these needs, the effects of post-deposition annealing on the resistivity and optical absorption characteristics of sputter deposited LSCO thin films were studied. The as-deposited films were characterized by an absorption coefficient of ∼ 12,500 cm1−1 and resistivities of ∼ 0.08 to 0.5 Δ-cm. With annealing at 800°C, the resistivity decreased to 350 νΔ-cm, while the absorption coefficient increased to ∼ 155,000 cm1−1. By using a post-deposition annealing step at 800°C and controlling film thickness, it appears that a standard LSCO 50/50 material may possess the requisite conductivity and optical transmission properties for this sensor protection device.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 365
Copyright
Copyright © Materials Research Society 2000

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References

1 Shirk, J. S., Optics & Photonics News, April (2000), p. 19.Google Scholar
2 Kalt, C. G., U.S. Patent 3,989,357 (1975).Google Scholar
3 Goodwin-Johansson, S. and McGuire, G. E., private communication (2000).Google Scholar
4 Raymond, M. V. et al. , Mat. Res. Soc. Symp. Proc., 433, 145 (1996).Google Scholar
5 Jonker, G. H. and Santen, J. H. Van, Physica, 15, 120 (1953).Google Scholar
6 Ohbayashi, H. et al. , Jpn. J. Appl. Phys., 13, 1 (1974).Google Scholar
7 Cheung, J. T. et al. , Appl. Phys. Lett., 62, 2045 (1993).Google Scholar
8 Madhukar, S. et al. , J. Appl. Phys., 81, 3543 (1997).Google Scholar