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Evidence of Defect Levels in P and N-Type Electron Irradiated Si

Published online by Cambridge University Press:  26 February 2011

S.D. Kouimtzi
S.D. Kouimtzi*
Affiliation:
J.J. Thomson Physical Laboratory.University of Reading, Reading,U.K. and University of Thessaloniki,Thessaloniki,Greece.
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Abstract

Capacitance bridge measurements at low temperature on irradiated specimens of p and n-type Si are reported. Electronic defect levels are seen at Ev+0.10 eV , Ev+0.14 eV and Ec−0.11 eV. The change of the band structure caused by irradiation is also described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 439
Copyright
Copyright © Materials Research Society 1991

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References

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