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Evidence of Hysteresis in a New p-i-n-i-p-i-n Amorphous Silicon Device

Published online by Cambridge University Press:  15 February 2011

D. Caputo ,
G. De Cesare  and
F. Palma
D. Caputo
Affiliation:
Department of Electronic Enginering, via Eudossiana 18,00184 Roma, (Italy)
G. De Cesare
Affiliation:
Department of Electronic Enginering, via Eudossiana 18,00184 Roma, (Italy)
F. Palma
Affiliation:
Department of Electronic Enginering, via Eudossiana 18,00184 Roma, (Italy)
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Abstract

A novel device based on a-Si:H p+-i-n−-i-p−-i-n+ structure, showing a hysteresis in its current-voltage curve is reported. A numerical device model allows to investigate in detail the fundamental role of the two lightly doped n− and p− layers, where charge trapping determines the bistable behavior of the device. The ON condition is mantained until the ambipolar charge injection overcomes the fixed charge. The transition OFF-ON starts when, increasing the applied voltage, one of the two lightly doped layers becomes completely depleted. The transition ON-OFF is, instead, mainly dependent on the recombination processes occurring in the central doped layers. Devices with hysteresis around 2 V and tum-on voltage around 12 are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 943
Copyright
Copyright © Materials Research Society 1997

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References

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