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Exchange of Bonded Hydrogen in Amorphous Silicon by Deuterium

Published online by Cambridge University Press:  26 February 2011

B. Abeles ,
L. Yang ,
D. P. Leta  and
C. Majkrzak
B. Abeles
Affiliation:
Exxon Research and Engineering Co., Annandale, NJ 08801
L. Yang
Affiliation:
Exxon Research and Engineering Co., Annandale, NJ 08801
D. P. Leta
Affiliation:
Exxon Research and Engineering Co., Annandale, NJ 08801
C. Majkrzak
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973
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Abstract

We show that bonded hydrogen in a-Si:H is readily exchanged by atomic deuterium when exposed to a deuterium plasma discharge. The effective diffusion coefficient for the D.H exchange, 10∼14 cnr/sec at 160°C, is comparable to that of interstitial hydrogen in c-Si.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 623
Copyright
Copyright © Materials Research Society 1987

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References

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