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Excitation Properties of Er-Doped GaP from Photoluminescence and High Pressure Studies

Published online by Cambridge University Press:  10 February 2011

T. D. Culp ,
X. Z. Wang ,
T. F. Kuech ,
B. W. Wessels  and
K. L. Bray
T. D. Culp
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison WI 53706, e-mail: bray@engr.wisc.edu
X. Z. Wang
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston IL 60208
T. F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison WI 53706, e-mail: bray@engr.wisc.edu
B. W. Wessels
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston IL 60208
K. L. Bray
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison WI 53706, e-mail: bray@engr.wisc.edu
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Abstract

The photoluminescence properties of MOCVD GaP:Er were investigated as a function of temperature, applied hydrostatic pressure, and excitation wavelength. Four sharp peaks are observed on the high energy side of the 1.54 μm Er3+ emission. These peaks are selectively excited by below-gap energies and have a significantly shorter lifetime than the main Er3+ emission, suggesting that at least two distinct Er3+ centers contribute to the luminescence. The low temperature photoluminescence excitation (PLE) spectrum of the 1.54 μm emission was also measured. Strong broad excitation of the Er3+ centers occurs with energies well below the indirect bandgap energy. In fact, the Er3+ emission intensity is significantly stronger when excited with below-gap wavelengths than with above-gap wavelengths. This result has been explained in terms of competition between Er3+ excitation and nonradiative deep level recombination for free carriers under above-gap excitation. With below-gap excitation, carriers are promoted directly into the Er3+ excitation pathway via absorption at an erbium-related trap. At 42 kbar, below-gap excitation is no longer more efficient than above-gap excitation, suggesting that competitive capture of free carriers by deep levels has been reduced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 279
Copyright
Copyright © Materials Research Society 1996

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References

1. Wang, X.Z. and Wessels, B.W., Appl. Phys. Lett. 64, 1537 (1994).Google Scholar
2. Alawadhi, H., Vogelgesang, R., Chin, T.P., Woodall, J.M., and Ramdas, A.K., Bull. of the Amer. Phys. Soc. 41, 476 (1996).Google Scholar
3. Thomas, D.G., Gershenzon, M., and Trumbore, F.A., Phys. Rev. 133, A269 (1964).Google Scholar
4. Kuech, T.F., Mat. Sci. Reports 2, 1 (1987).Google Scholar
5. Monteiro, T., Pereira, E., Domingue-Adame, F., and Piqueras, J., Mat. Sci. Forum 117–118, 375 (1993).Google Scholar
6. Nakagome, H., Uwai, K., and Takahei, K., Appl. Phys. Lett. 53, 1726 (1988).Google Scholar
7. Takahei, K., Taguchi, A., Horikoshi, Y., and Nakata, J., J. Appl. Phys. 76, 4332 (1994).Google Scholar
8. Abid, H., Badi, N., Soudini, B., Amrane, N., Driz, M., Hammadi, M., Aourag, H., and Khelifa, B., Mat. Chem. and Phys. 38, 162 (1994).Google Scholar
9. Takahei, K. and Taguchi, A., Mat. Sci. Forum 83–87, 641 (1992).Google Scholar
10. Wang, X.Z. and Wessels, B.W., Mat. Sci. Forum 196–201, 663 (1995).Google Scholar
11. Bourgoin, J. and Lannoo, M., Point Defects in Semiconductors II (Springer-Verlag, New York, 1983), ch. 6.Google Scholar
12. Pantelides, S.T., Rev. Modem Phys. 50, 797 (1978), p. 804.Google Scholar
13. Benyattou, T., Seghier, D., Guillot, G., Moncorge, R., Galtier, P., and Charasse, M.N., Mat. Res. Soc. Symp. Proc. 163, 69 (1990).Google Scholar
14. Benyattou, T., Seghier, D., Guillot, G., Moncorge, R., Galtier, P., and Charasse, M.N., Appl. Phys. Lett. 58, 2132 (1991).Google Scholar
15. Wang, X.Z. and Wessels, B.W., Mat. Sci. Forum 196–201, 657 (1995).Google Scholar