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Excitation Spectroscopy of the Defect Bound Excitons in MBE GaAs

Published online by Cambridge University Press:  26 February 2011

S. Charbonneau ,
W. G. Mcmullan ,
M. O. Henry  and
M. L. W. Thewalt
S. Charbonneau
Affiliation:
Department of Physics, Simon Fraser Univ., Burnaby, B.C., Canada V5A 1S6
W. G. Mcmullan
Affiliation:
Department of Physics, Simon Fraser Univ., Burnaby, B.C., Canada V5A 1S6
M. O. Henry
Affiliation:
Department of Physics, Simon Fraser Univ., Burnaby, B.C., Canada V5A 1S6
M. L. W. Thewalt
Affiliation:
Department of Physics, Simon Fraser Univ., Burnaby, B.C., Canada V5A 1S6
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Abstract

The origin of the complex photoluminescence line series often observed in MBE-grown GaAs has been the subject of considerable recent study. We report on the results of high resolution, high sensitivity resonant excitation measurements which conclusively prove the lines to result from the recombination of excitons bound to a series of acceptors. New details of the properties of the bound excitons and acceptors are revealed. The direct connection between this acceptor series and an often-observed series of broader, lower energy lines is also established. Some preliminary studies of this line series under applied magnetic fields are also described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 549
Copyright
Copyright © Materials Research Society 1988

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Footnotes

*

Permanent address: School of Physical Sciences, National Institute for Higher Education, Collins Avenue, Dublin 9, Ireland

References

REFERENCES

1.Kunzel, H. and Ploog, H., Appl. Phys. Lett. 37, 416 (1980).Google Scholar
2.Skolnick, M.C., Harris, T.D., Tu, C.W., Brennan, T.M. and Sturge, M.D., Appl. Phys. Lett. 46, 427 (1985).Google Scholar
3.Briones, F. and Collins, D.M., 3. Electron. Mater. 11, 847 (1982).Google Scholar
4.Skromme, B.J., Bose, S.S., Lee, B., Low, T.S., Lepkowski, T.R., Dejule, R.Y. and Stillman, G.E., J. Appl. Phys. 58, 4685 (1985).Google Scholar
5.Skolnick, M.S., Tu, C.W. and Ha-ris, T.D., Phys. Rev. B 33, 8468 (1986).Google Scholar
6.Skolnick, M.S., Proc. 18th Int. Conf. Phys. Semicond., editor 0. Engstrom (World Scientific, Singapore, 1987) 1389.Google Scholar
7.McMullan, W.G., Charbonneau, S. and Thewalt, M.L.W., Rev. Sci. Instrom. 58, 1626 (1986).Google Scholar
8.Haynes, J.R., Phys. Rev. Lett. 4, 361 (1960).Google Scholar
9.Reynolds, D.C., Bajaj, K.K., Litton, C.W., Peters, G., Yu, P.W., Fischer, R., Huang, D. and Morkoc, H., 3. Appl. Phys. 60, 2511 (1986).Google Scholar
10.Beye, A.C. and Neu, G., 3. Appl. Phys. 58,-3549 (1985).Google Scholar
11. 3.Contour, P., Neu, G., Leroux, M., Chaix, C., Levesque, B. and Etienne, P., J.Vac.Sci. Technol. B 1, 811 (1983).Google Scholar
12.Steiner, T., Thewalt, M.L.W., Koteles, E.S., and Salerno, J.P., Appi. Phys.Lett. 47, 257 (1985).Google Scholar
13.Eaves, L. and Halliday, D.P., J. Phys. C., 17, L705 (1984).Google Scholar