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External Cavity Mid-Infrared Semiconductor Lasers

Published online by Cambridge University Press:  10 February 2011

H. Q. Le ,
C.-H. Lin ,
S. J. Murry ,
J. Zheng  and
S.-S. Pei
H. Q. Le
Affiliation:
Department of Electrical and Computer Engineering and Space Vacuum Epitaxy CenterUniversity of HoustonHouston, TX 77204-4793, USA
C.-H. Lin
Affiliation:
Department of Electrical and Computer Engineering and Space Vacuum Epitaxy CenterUniversity of HoustonHouston, TX 77204-4793, USA
S. J. Murry
Affiliation:
Department of Electrical and Computer Engineering and Space Vacuum Epitaxy CenterUniversity of HoustonHouston, TX 77204-4793, USA
J. Zheng
Affiliation:
Department of Electrical and Computer Engineering and Space Vacuum Epitaxy CenterUniversity of HoustonHouston, TX 77204-4793, USA
S.-S. Pei
Affiliation:
Department of Electrical and Computer Engineering and Space Vacuum Epitaxy CenterUniversity of HoustonHouston, TX 77204-4793, USA
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Abstract

Sb mid-IR laser can be used in external configuration to achieve wide wavelength tuning range. At low temperature, gain media with band-edge wavelengths between 3.3 to 4 pm have been demonstrated with wavelength tuning up to ∼9% of the center wavelength. Power output from few tens of mW to 0.2-W peak, 20-mW average was achieved. Type-II Sb laser promises the possibility of such performance at higher temperature, e. g. 200 K. However, significant trade-off must be considered between tuning range and power and efficiency. Optimization requires consideration of both basic wafer design and cavity geometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 159
Copyright
Copyright © Materials Research Society 2000

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References

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