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The Fabrication of NiSi2/Si(100) Interfaces with Controlled Morphologies

Published online by Cambridge University Press:  25 February 2011

J. P. Sullivan ,
R. T. Tung ,
F. Schrey  and
W. R. Graham
J. P. Sullivan
Affiliation:
Univ. of Pennsylvania, Dept. of Materials Science, Philadelphia, PA 19104
R. T. Tung
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
F. Schrey
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
W. R. Graham
Affiliation:
Univ. of Pennsylvania, Dept. of Materials Science, Philadelphia, PA 19104
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Abstract

The morphology and defect structures associated with thin NiSi2 films prepared on Si(100) were investigated. Facets were found to be a common defect structure at the interface unless stoichiometric co-deposition of Ni and Si was performed. Annealing thin, uniform NiSi2 layers prepared by stoichiometric co-deposition to temperatures ≥ 700°C yielded epitaxial films of high crystalline perfection. Films in which the deposition was off-stoichiometric exhibited a variety of defect structures. In addition to facets at the interface, networks of meandering micro-twins or stacking faults were observed in highly Ni-rich films, while pinholes were observed in Si-rich films. Facets at the interface were found to be eliminated by annealing at temperatures ≥ - 750°C, indicating that the planar NiSi2/Si(100) interface is energetically stable with respect to the formation of NiSi2(111) facets. Through manipulation of the film growth kinetics, NiSi2/Si(100) interfaces with arbitrary facet densities were produced. Partially faceted NiSi2/Si(100) interfaces represent ideal experimental systems for revealing the effects of Schottky barrier inhomogeneity on the electrical measurements of metal/semiconductor contacts.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 623
Copyright
Copyright © Materials Research Society 1993

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References

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