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Fast and Slow UV-Photoresponse in n-Type GaN

Published online by Cambridge University Press:  10 February 2011

R. Rocha ,
S. Koynov ,
P. Brogueira ,
R. Schwarz ,
V. Chu ,
M. Topf ,
D. Meister  and
B. K. Meyer
R. Rocha
Affiliation:
Physics Department, Instituto Superior Trcnico, P-1096 Lisbon, Portugal
S. Koynov
Affiliation:
Physics Department, Instituto Superior Trcnico, P-1096 Lisbon, Portugal
P. Brogueira
Affiliation:
Physics Department, Instituto Superior Trcnico, P-1096 Lisbon, Portugal
R. Schwarz
Affiliation:
Physics Department, Instituto Superior Trcnico, P-1096 Lisbon, Portugal
V. Chu
Affiliation:
Instituto de Engenharia de Sistemas e Computadores, P-1000 Lisbon, Portugal
M. Topf
Affiliation:
I. Physics Department, University of Giessen, D-35392 Giessen, Germany
D. Meister
Affiliation:
I. Physics Department, University of Giessen, D-35392 Giessen, Germany
B. K. Meyer
Affiliation:
I. Physics Department, University of Giessen, D-35392 Giessen, Germany
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Abstract

The photocurrent decay in n-type GaN films prepared by low-pressure chemical vapor deposition (LPCVD) was measured in the ms-to-s time range using steady-state UV light and in the μs time regime using short high-power pulses from higher harmonics of a Nd:YAG laser. A power law time dependence is observed with exponents ranging from −0.1 to −0.3, which is an indication of a broad distribution of trapping states inside the band gap. Combining Hall effect results and the magnitude of the initial slope of the photocurrent decay we estimate a mobility-lifetime product of 2.1×10−4 cm2/V for photogenerated electrons at times below a few μs. Slow transients might be a handicap for applications of GaN in UV detectors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 395
Copyright
Copyright © Materials Research Society 1999

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References

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