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Fast In-diffusion of Hydrogen at the Initial Stage of Hydrogen Plasma Treatment on a-Si:H Films Observed by In-situ ESR Measurements

Published online by Cambridge University Press:  17 March 2011

Ujjwal Kr. Das ,
Tetsuji Yasuda  and
Satoshi Yamasaki
Ujjwal Kr. Das
Affiliation:
JRCAT-ATP, 1-1-4 Higashi, Tsukuba City, Ibaraki 305 0046, Japan
Tetsuji Yasuda
Affiliation:
JRCAT-NAIR, 1-1-4 Higashi, Tsukuba City, Ibaraki 305 0046, Japan
Satoshi Yamasaki
Affiliation:
JRCAT-NAIR, 1-1-4 Higashi, Tsukuba City, Ibaraki 305 0046, Japan
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Abstract

Time evolution of Si dangling bonds (dbs) was monitored during atomic hydrogen treatment of a-Si:H films using an in-situ electron-spin-resonance (ESR) technique. A high diffusion coefficient (>10−10 cm2s−1) of free atomic H in a-Si:H was detected at the very initial stage of H exposure. Atomic H diffuses into the bulk of the film (∼100 nm) and creates additional metastable dbs. The spatial distribution of such metastable dbs becomes deeper at lower treatment temperatures. An activated type of db creation reaction determines the distribution of these dbs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A26.5
Copyright
Copyright © Materials Research Society 2000

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