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Ferroelectric Switching in Lead Zirconatelead Zinc Niobate Thin Films

Published online by Cambridge University Press:  25 February 2011

K. R. Udayakumar ,
P. J. Schuele ,
J. Chen ,
K. G. Brooks  and
L. E. Cross
K. R. Udayakumar
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
P. J. Schuele
Affiliation:
Ramtron International Corporation, Colorado Springs, CO 80921
J. Chen
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
K. G. Brooks
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
L. E. Cross
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
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Abstract

Thin films of PbZrO3-Pb(Zn0.33Nb0.67)03, with PZN contents of 8- 12%, were fabricated through the sol-gel spin-on technique. The structural, low frequency capacitive, and polarization reversal characteristics were investigated as a function of composition in this solid solution system. The switching of ferroelectric polarization was tested by a sequence of square wave pulses consisting of two positive pulses followed by two negative pulses. Compositions with higher PZN contents are promising for switching applications; the films were typically characterized by a switched charge of 4-14 μC/cm2, coercive field of around 30 kV/cm, and relative permittivity of 400-800.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 469
Copyright
Copyright © Materials Research Society 1992

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References

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