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Field-Assisted Germanium Induced Crystallization of Amorphous Silicon

Published online by Cambridge University Press:  01 February 2011

J. Derakhshandeh ,
S. Mohajerzadeh ,
N. Golshani ,
E. Asl Soleimani  and
M.D. Robertson
J. Derakhshandeh
Affiliation:
Thin Film Laboratory, Department of Electrical and Computer Engineering, University of Tehran, Tehran, Iran Tel/Fax: +98 (21) 801 1235
S. Mohajerzadeh
Affiliation:
Thin Film Laboratory, Department of Electrical and Computer Engineering, University of Tehran, Tehran, Iran Tel/Fax: +98 (21) 801 1235
N. Golshani
Affiliation:
Thin Film Laboratory, Department of Electrical and Computer Engineering, University of Tehran, Tehran, Iran Tel/Fax: +98 (21) 801 1235
E. Asl Soleimani
Affiliation:
Thin Film Laboratory, Department of Electrical and Computer Engineering, University of Tehran, Tehran, Iran Tel/Fax: +98 (21) 801 1235
M.D. Robertson
Affiliation:
Department of Physics, University of Acadia, Canada Email:smohajer@sun1.vlsi.uwaterloo.ca
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Abstract

A field-assisted germanium-induced crystallization of amorphous silicon on glass is reported at temperatures below 500°C. Silicon films with a thickness of 0.1um are covered with 500Å of germanium as the seed of crystallization. Applying an electric field enhances the growth from both cathode and anode sides. XRD, SEM and TEM analyses have been used to study the crystallinity of the samples which have been treated under different annealing conditions, all confirming the polycrystalline nature of the annealed silicon films. The value of the applied voltage plays a crucial role in the crystalline quality of Si layers. While samples treated without an external voltage are not polycrystalline, an electric voltage of 10 V applied for a 1cm separation between anode and cathode, seems suitable for achieving good poly-crystalline Si layers. The size of grains varies between 0.1 and 0.2μm, as observed using SEM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A16.3
Copyright
Copyright © Materials Research Society 2003

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