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Formation and Electronic Structure of the Mn/GaAs(100) Interface

Published online by Cambridge University Press:  25 February 2011

X. Jin ,
M. Zhang ,
G. S. Dong ,
Z. S. Li ,
Xun Wang  and
X. G. Zhu
X. Jin
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, China
M. Zhang
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, China
G. S. Dong
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, China
Z. S. Li
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, China
Xun Wang
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, China
X. G. Zhu
Affiliation:
Zhejiang Institute of Technology, HangZhou, China.
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Abstract

Formation and electronic structure of the Mn/GaAs(100) interface grown at room temperature are studied by photoemission. The growth at early stage is identified to be in two-dimensional mode. The chemical reaction and the interface diffusion happened between Mn and GaAs are explored in some details. A ferromagnetic phase of Mn overlayer at early stage is deduced from the change of electron density of states near the Fermi edge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 671
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Prinz, G.A., Science 250, 1093 (1990)Google Scholar
[2] Himpsel, F.J., Phys. Rev. Lett. 67, 2363 (1991)Google Scholar
[3] Hughes, G., Ludeke, R., Schäffler, F., and Rieger, D., J. Vac. Sci. Technol. B 4, 1924 (1986);Google Scholar
Stiles, K., Honng, S. F., and Kahn, A., McKinley, J., Kilday, D. G., and Margaritondo, G., J. Vac. Sci. Technol. B 6, 1392 (1988)Google Scholar
[4] Yeh, J.J. and Lindau, I., Atomic Data and Nuclear Data Table 32, 1 (1985)Google Scholar
[5] Zhang, M., Dong, G. S., Zhu, X. G., Li, Z. S., Jin, X. and Wang, Xun, the Proceedings of 21st ICPS, to be published.Google Scholar
[6] Drude, W. and Himpsel, F. J., Phys. Rev. B 36, 4131 (1987)Google Scholar