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The Formation and Morphology of Stress Induced Voids in Thin Narrow Aluminum Lines

Published online by Cambridge University Press:  25 February 2011

C. A. Paszkiet ,
M. A. Korhonen  and
Che-Yu Li
C. A. Paszkiet
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, New York 14853
M. A. Korhonen
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, New York 14853
Che-Yu Li
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, New York 14853
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Abstract

Thin, narrow, lines were reactive ion etched from a highly textured aluminum film deposited on (100) silicon substrates; some arrays of lines were covered with a passivation layer of silicon nitride. Passivated and unpassivated lines were heat treated at 400°C.

Voids were present in nitride covered lines which were aged for over three months at room temperature as well as in nitride covered lines examined immediately after heat treatment. Voids were not visible in bare, heat treated lines. Void nucleation occurred at the points of intersection of grain boundaries with line edges and growth appeared to follow grain boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 203: Symposium D – Electronic Packaging Materials Science V , 1990 , 381
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Klema, Jon, Pyle, Ronald, and Domangue, Edward. Reliability implications of nitrogen contamination during deposition of sputtered aluminum/silicon metal films. IEEE International Reliability Physics Symposium, 22:1–5, 1984.Google Scholar
[2] Curry, J., Fitzgibbon, G., Guan, Y., Muollo, R., Nelson, G., and Thomas, A.. New failure mechanisms in sputtered aluminum-silicon films. IEEE International Reliability Physics Symposium, 22:6–8, 1984.Google Scholar
[3] Turner, T. and Wendel, K.. The influence of stress on aluminum conductor life. IEEE International Reliability Physics Symposium, 23:142–147, 1985.Google Scholar
[4] Hinode, K., Owada, N., Nishida, T., and Mukai, K.. Stress-induced grain boundary fractures in Al-Si interconnects. Journal of Vacuum Science and Technology B, 5(3):518–522, March/April 1987.Google Scholar
[5] Li, Che-Yu, Black, Ronald D., and LaFontaine, William R.. Analysis of thermal stress-induced grain boundary cavitation and notching in narrow Al-Si metallizations. Applied Physics Letters, 53(l):31–33, July 1988.Google Scholar
[6] Korhonen, M. A., Black, R. D., and Li, Che-Yu. Stress relaxation of passivated aluminum line metallizations on silicon substrates. Journal of Applied Physics, AA(100), 1990.Google Scholar
[7] Paszkiet, C. A., Korhonen, M. A., and Li, Che-Yu. Stress relaxation and void formation in narrow aluminum lines. Manuscript in preparation.Google Scholar