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Formation of Buried Tisi2 Layers in Single Crystal Silicon by Ion Implantion

Published online by Cambridge University Press:  28 February 2011

P. Madakson ,
G.J. Clark ,
F.K. Legoues ,
F.M. d'Heurle  and
J.E.E. Baglin
P. Madakson
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
G.J. Clark
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
F.K. Legoues
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
F.M. d'Heurle
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
J.E.E. Baglin
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
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Buried TiSi2 layers, about 600Å thick and 900Å below the surface, were formed in < 111> silicon by ion implantation. The implantation was done with either 120 or 170 keV Ti+ to doses ranging from 5 x 1016 to 2 x 1017 ions/cm2, and at temperatures of between ambient and 650° C. Annealing was done at 600° C, 700°C and 1000°C. Continuous buried layers were achieved only with samples implanted with doses equal or greater than 1017 ions/cm2 and at temperatures above 450°C. Below this dose TiSi2, was present only as discrete precipitates. For room temperature implants, the TiSi2, layer is formed on the surface. The damage present consists of dispersed TiSi6 precipitates and microtwins.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 281
Copyright
Copyright © Materials Research Society 1988

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References

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